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Directed branch growth in aligned nanowire arrays.

Identifieur interne : 000212 ( Main/Exploration ); précédent : 000211; suivant : 000213

Directed branch growth in aligned nanowire arrays.

Auteurs : RBID : pubmed:24628419

Abstract

Branch growth is directed along two, three, or four in-plane directions in vertically aligned nanowire arrays using vapor-liquid-solid glancing angle deposition (VLS-GLAD) flux engineering. In this work, a dynamically controlled collimated vapor flux guides branch placement during the self-catalyzed epitaxial growth of branched indium tin oxide nanowire arrays. The flux is positioned to grow branches on select nanowire facets, enabling fabrication of aligned nanotree arrays with L-, T-, or X-branching. In addition, a flux motion algorithm is designed to selectively elongate branches along one in-plane axis. Nanotrees are found to be aligned across large areas by X-ray diffraction pole figure analysis and through branch length and orientation measurements collected over 140 μm(2) from scanning electron microscopy images for each array. The pathway to guided assembly of nanowire architectures with controlled interconnectivity in three-dimensions using VLS-GLAD is discussed.

DOI: 10.1021/nl404377v
PubMed: 24628419

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Le document en format XML

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<name sortKey="Taschuk, Michael T" uniqKey="Taschuk M">Michael T Taschuk</name>
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